Global Discrete Power Device Market 2018 – Infineon Technologies, ON Semiconductor, Mitsubishi Electric Corp, Toshiba, STMicroelectronics, Vishay Intertechnology, Fuji Electric

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A discrete power device (or discrete component) is an electronic component with just one circuit element, either passive (resistor, capacitor, inductor, diode) or active (transistor or vacuum tube), other than an integrated circuit. It is an electronic component widely used in automotive & transportation, industrial, consumer, communication and among others. In this report, the transistor, diodes and tryristors are counted.

Scope of the Report:

This report focuses on the Discrete Power Device in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.

Infineon Technologies AG accounted for 18.506% of the Global Discrete Power Device market share in 2016. Other players accounted for 9.280%, 7.340% including ON Semiconductor and Mitsubishi Electric Corp. ON Semiconductor climbed to second place, gaining almost six percentage points of share, because of its acquisition of Fairchild Semiconductor.

The market for Discrete Power Device divided into five geographic regions: In Europe, total Discrete Power Device accounted for 13.88%. In the North America, total Discrete Power Device accounted for 16.59 %. The market in Asia Pacific Discrete Power Device accounted for 63.11%, in South America 2.89%, and in the Middle East & Africa 3.53%.

The world’s largest application of Discrete Power Device is in the Automotive & Transportation sector, accounted for 36.60%, followed by Consumer electronics with 27.01%, Industrial with 19.42% and Communications with 5.34%.

The worldwide market for Discrete Power Device is expected to grow at a CAGR of roughly xx% over the next five years, will reach xx million US$ in 2023, from xx million US$ in 2017, according to Research study.

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Market Segment by Companies, this report covers

Infineon Technologies

ON Semiconductor

Mitsubishi Electric Corp

Toshiba

STMicroelectronics

Vishay Intertechnology

Fuji Electric

Renesas Electronics

ROHM Semiconductor

Nexperia

Microsemi

IXYS Corporation

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Market Segment by Regions, regional analysis covers

North America (United States, Canada and Mexico)

Europe (Germany, France, UK, Russia and Italy)

Asia-Pacific (China, Japan, Korea, India and Southeast Asia)

South America (Brazil, Argentina, Colombia etc.)

Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)

Market Segment by Type, covers

Transistor

Diodes

Thyristors

Market Segment by Applications, can be divided into

Automotive & Transportation

Industrial

Consumer

Communication

Others

There are 15 Chapters to deeply display the global Discrete Power Device market.

Chapter 1, to describe Discrete Power Device Introduction, product scope, market overview, market opportunities, market risk, market driving force;

Chapter 2, to analyze the top manufacturers of Discrete Power Device, with sales, revenue, and price of Discrete Power Device, in 2016 and 2017;

Chapter 3, to display the competitive situation among the top manufacturers, with sales, revenue and market share in 2016 and 2017;

Chapter 4, to show the global market by regions, with sales, revenue and market share of Discrete Power Device, for each region, from 2013 to 2018;

Chapter 5, 6, 7, 8 and 9, to analyze the market by countries, by type, by application and by manufacturers, with sales, revenue and market share by key countries in these regions;

Chapter 10 and 11, to show the market by type and application, with sales market share and growth rate by type, application, from 2013 to 2018;

Chapter 12, Discrete Power Device market forecast, by regions, type and application, with sales and revenue, from 2018 to 2023;

Chapter 13, 14 and 15, to describe Discrete Power Device sales channel, distributors, traders, dealers, Research Findings and Conclusion, appendix and data source

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